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| Ordering number : ENA0518 FSS804 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS804 Features * * General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle1% Duty cycle1% Mounted on a ceramic board (1200mm2!0.8mm), PW10s Conditions Ratings 30 20 14 18 52 3.3 150 --55 to +150 Unit V V A A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=14A ID=14A, VGS=10V ID=7A, VGS=4.5V ID=7A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 10 1.2 11.5 19 7 11 14 3000 500 350 28 250 160 120 10 16 20 2.6 typ max Unit V A A V S m m m pF pF pF ns ns ns ns Marking : S804 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0406PA MS IM TC-00000195 No. A0518-1/4 FSS804 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=14A VDS=10V, VGS=10V, ID=14A VDS=10V, VGS=10V, ID=14A IS=14A, VGS=0V Ratings min typ 50 8 10 0.81 1.2 max Unit nC nC nC V Package Dimensions unit : mm (typ) 7005-002 8 5 0.3 Switching Time Test Circuit VDD=15V 10V 0V 6.0 VIN ID=14A RL=1.07 VIN 4.4 D G PW=10s D.C.1% VOUT 1 4 0.43 0.2 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 P.G 50 0.595 1.27 0.1 1.5 1.8 MAX S FSS804 14 ID -- VDS 8.0V 20 ID -- VGS VDS=10V 6.0V 18 16 Drain Current, ID -- A 10.0V 4.5V 12 4.0V 10 Drain Current, ID -- A 14 12 10 8 6 8 VGS=3.0V 2 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 25 4 2.5 --25 3.0 3.5 C C 4 Ta=7 5C 6 4.0 Drain-to-Source Voltage, VDS -- V 30 IT11512 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT11513 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 25 25 ID=7A 14A 20 20 15 15 A I =7 4.0V, D S= VG 10 10 =7A .5V, I D V GS=4 A I =14 10.0V, D V GS= 5 5 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT11514 Ambient Temperature, Ta -- C IT11515 No. A0518-2/4 FSS804 5 yfs -- ID VDS=10V 3 2 10 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 3 Source Current, IS -- A 2 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 Ta= 75 C = Ta --2 C 5 25 C 0.6 75 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 0.4 0.5 0.7 --25 C 0.8 C 25 C 0.9 1.0 IT11517 Drain Current, ID -- A 7 5 IT11516 10000 7 5 SW Time -- ID Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS VDD=15V VGS=10V f=1MHz Switching Time, SW Time -- ns 3 2 Ciss, Coss, Crss -- pF td(off) 3 2 Ciss 100 7 5 3 2 tf 1000 7 5 3 2 tr td(on) Coss Crss 10 1.0 100 2 3 5 7 10 2 3 0 5 10 15 20 25 30 IT11519 Drain Current, ID -- A 10 9 IT11518 100 7 5 3 2 Qg -- VGS Drain-to-Source Voltage, VDS -- V ASO IDP=52A ID=14A 10 Gate-to-Source Voltage, VGS -- V VDS=10V ID=14A 8 10 0m s 10s 1m s 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 55 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 ms DC Operation in this area is limited by RDS(on). 10 op s era tio n Total Gate Charge, Qg -- nC 3.5 3.3 IT11520 PD -- Ta M e nt ou 0.1 7 5 Ta=25C 3 Single pulse 2 2 0.01 Mounted on a ceramic board (1200mm !0.8mm) 2 3 5 7 1.0 2 3 5 7 10 23 5 0.01 2 3 5 7 0.1 IT11521 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 3.0 d on 2.5 am er ac b ic 2.0 oa rd (1 20 1.5 m 0m 2! 1.0 8m 0. m P ), 0.5 0 0 20 40 60 80 100 120 140 1 W 0s 160 Ambient Temperature, Ta -- C IT11522 No. A0518-3/4 FSS804 Note on usage : Since the FSS804 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0518-4/4 |
Price & Availability of FSS804
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